msp430 FLASH 字节读写程序

430的数据RAM 与FLASH的读写

#define FLASH_ADDRESS 0x1000          //定义FLASH信息区地址B段
void flash_erase(unsigned char*);

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount);

void write_flash(unsigned char *pc_byte,unsigned char *array,unsigned char amount);

//******************************************************************************

//FLASH段擦除

void flash_erase(unsigned char *pc_word)

{

while(FCTL3 & BUSY);                       //如果处于忙状态，则等待

FCTL3 = FWKEY ;                          //清出LOCK标志，解锁

FCTL1 = FWKEY + ERASE ;                 //允许段擦除

*pc_word = 0;                         //擦除..擦除..

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK ;             //加锁

}

//******************************************************************************

//向FLASH信息区读出指定数量的字节数据

//unsigned int*pc_word :信息区数据指针

//unsigned char *array :读出数据存放数据数组,8位长

//unsigned char amount :读操的数量,范围0-127

void read_flash(unsigned char *pc_byte, unsigned char *array,unsigned char amount)

{ unsigned char i;

    for(i=0;i

    {

      *array = *pc_byte; //读数据，读数据时，flash地址自动加 1

      array++;          //接收缓冲区地址加 1  

    }
}

//******************************************************************************

//向FLASH信息区写入指定数量的字节数据

//unsigned char *pc_byte 信息区数据指针

//unsigned char *array :读出数据存放数据数组,8位长

//unsigned char amount :读操的数量,范围0-127

void write_flash(unsigned char *pc_byte,unsigned char *array, unsigned char amount)

{ unsigned char i;
_DINT();

while(FCTL3 & BUSY);                    //如果处于忙状态，则等待

FCTL3 = FWKEY ;                       //清出LOCK标志

FCTL1 = FWKEY + WRT ;              //写操作，块编程，+ BLKWRT;

    for(i=0;i

    {  

      *pc_byte = *array;

      //*pc_byte = num;

     // num +=1;

      array++;                       //发送缓冲区地址加 1

      pc_byte++;                   //写flash时，地址人为加 1

     while(!(FCTL3 & WAIT));    //如果处于忙状态，则等待　，若用软件仿真，去掉　　　　　　　　　　　　　　　　　／／这语句
 

}

FCTL1 = FWKEY;           //写操作完成，清除编程允许位 WRT，BLKWRT

while(FCTL3 & BUSY);

FCTL3 = FWKEY + LOCK;

}

  
/*

#define RAM_ADDRESS 0x300 
__no_init volatile uchar  XINHAO[3]    @ 0x300;   //型号 默认201
__no_init volatile uchar  BdFlag       @ 0x303;   ////ff表示没有标定,00表示已标定置零01表示已标定1点.02表示已标定2点.03表示已标定3点
__no_init volatile uchar  EDZHI        @ 0x304;     //额定值
__no_init volatile uchar  CYSJ         @ 0x305;     //采样时间
__no_init volatile uchar  GJSJ         @ 0x306;     //自动关机时间
__no_init volatile uchar  YLDW        @ 0x307;   // 压力单位  
__no_init volatile float  Pyz          @ 0x30A;   // 置零后的皮压值                
__no_init volatile float  Bdxs[16]     @ 0x310;   // 标定系数
__no_init volatile float  Bdzhi[16]    @ 0x350;   // 标定值
__no_init volatile float  Bdnm[16]     @ 0x390;   // 标定内码0X0D0

void main(void)
{
  volatile unsigned int i;                  // Use volatile to prevent removal
                                            // by compiler optimization

  WDTCTL = WDTPW + WDTHOLD;                 // Stop WDT
   FLL_CTL0 |= XCAP14PF;                     // Configure load caps
   for (i = 0; i < 10000; i++);              // Delay for 32 kHz crystal to
   unsigned char *pc_flash;                            //定义字节指针变量  为字节读写
 pc_flash = (unsigned char *) FLASH_ADDRESS;         //为指针初始化                                          // stabilize
        unsigned char *pc_ram;                            //定义字节指针变量  为字节读写
 pc_ram = (unsigned char *) RAM_ADDRESS;         //为指针初始化    

   while(1)

{       
      BdFlag = 1;
      Bdxs[0]=3.14;   
      flash_erase(pc_flash);                     //段擦除
      write_flash(pc_flash,pc_ram ,208);               //写入指定字节数量
      read_flash(pc_flash,pc_ram,208);                    //再读出刚才写的字节
      LPM3;                                     // Enter low power mode 3
}  */