stm32l476 内部flash HAL库操作方法

stm32l476 FLASH特征

• Up to 1 Mbyte of Flash memory with dual bank architecture supporting read-while-write 

capability (RWW). 

• Memory organization: 2 banks (Bank 1 and Bank 2) 

– main memory: 512 Kbyte per bank 

– information block: 32 Kbyte per bank 

• 72-bit wide data read (64 bits plus 8 ECC bits) 

• 72-bit wide data write (64 bits plus 8 ECC bits) 

• Page erase (2 Kbyte), bank erase and mass erase (both banks) 

摘自 STM32 RM0351 Reference manual 文档

• stm32l476 dual bank 地址表 
  

写入操作流程

1. FLASH解锁 
   
   HAL_FLASH_Unlock(); 
   

2. 擦除FLASH 
   
   HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *PageError); 
   

3. 写入FLASH 
   
   HAL_FLASH_Program(uint32_t TypeProgram, uint32_t Address, uint64_t Data); 
   

4. 锁定FLASH 
   
   HAL_FLASH_Lock(); 

读取操作

直接从目标地址读取, uint8_t* 按照1个字节读取，如果是uint32_t* 按照一个字读取

buff[i] = *(__IO uint8_t*)(dest_addr + i);

//直接从目标地址读取, uint8_t* 按照1个字节读取，如果是uint32_t* 按照一个字读取

具体实现

/**

  * @brief  Initializes Memory.

  * @param  None

  * @retval 0 if operation is successeful, MAL_FAIL else.

  */

flash_status_t Flash_If_Init(void)

{

  /* Unlock the internal flash */

  HAL_FLASH_Unlock();

  return FLASH_OK;

}

/**

  * @brief  De-Initializes Memory.

  * @param  None

  * @retval 0 if operation is successeful, MAL_FAIL else.

  */

flash_status_t Flash_If_DeInit(void)

{

  /* Lock the internal flash */

  HAL_FLASH_Lock();

  return FLASH_OK;

}

/**

  * @brief  Erases sector.

  * @param  Add: Address of sector to be erased.

  * @retval 0 if operation is successeful, MAL_FAIL else.

  */

flash_status_t Flash_If_Erase(uint32_t Add)

{

  uint32_t PageError = 0;

  /* Variable contains Flash operation status */

  HAL_StatusTypeDef status;

  FLASH_EraseInitTypeDef eraseinitstruct;

  /* Clear OPTVERR bit set on virgin samples */

  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

   /* Get the number of sector to erase from 1st sector*/

  eraseinitstruct.Banks = GetBank(Add);

  eraseinitstruct.TypeErase = FLASH_TYPEERASE_PAGES;

  eraseinitstruct.Page = GetPage(Add);

  eraseinitstruct.NbPages = 1;

  status = HAL_FLASHEx_Erase(&eraseinitstruct, &PageError);

  if (status != HAL_OK)

  {

    return FLASH_ERR;

  }

  return FLASH_OK;

}

/**

  * @brief  Writes Data into Memory.

  * @param  src: Pointer to the source buffer. Address to be written to.

  * @param  dest: Pointer to the destination buffer.

  * @param  Len: Number of data to be written (in bytes).

  * @retval 0 if operation is successeful, MAL_FAIL else.

  */

flash_status_t Flash_If_Write(uint8_t *src, uint32_t dest_addr, uint32_t Len)

{

  uint32_t i = 0;

  /* Clear OPTVERR bit set on virgin samples */

  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

  for(i = 0; i < Len; i += 8)

  {

    /* Device voltage range supposed to be [2.7V to 3.6V], the operation will

       be done by byte */

    if(HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, (uint32_t)(dest_addr+i), *(uint64_t*)(src+i)) == HAL_OK)

    {

     /* Check the written value */

      if(*(uint64_t *)(src + i) != *(uint64_t*)(dest_addr+i))

      {

        /* Flash content doesn't match SRAM content */

        return FLASH_CHECK_ERR;

      }

    }

    else

    {

      /* Error occurred while writing data in Flash memory */

      return FLASH_ERR;

    }

  }

  return FLASH_OK;

}

/**

  * @brief  Reads Data into Memory.

  * @param  src: Pointer to the source buffer. Address to be written to.

  * @param  dest: Pointer to the destination buffer.

  * @param  Len: Number of data to be read (in bytes).

  * @retval return FLASH_OK.

  */

flash_status_t Flash_If_Read(uint8_t* buff, uint32_t dest_addr, uint32_t Len)

{

    uint32_t i;

    for(i = 0; i < Len; i++){

            buff[i] = *(__IO uint8_t*)(dest_addr + i);

    }

  /* Return a valid address to avoid HardFault */

  return FLASH_OK;

}

/**

  * @brief  Gets the page of a given address

  * @param  Addr: Address of the FLASH Memory

  * @retval The page of a given address

  */

static uint32_t GetPage(uint32_t Addr)

{

  uint32_t page = 0;

  if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))

  {

    /* Bank 1 */

    page = (Addr - FLASH_BASE) / FLASH_PAGE_SIZE;

  }

  else

  {

    /* Bank 2 */

    page = (Addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;

  }

  return page;

}

/**

  * @brief  Gets the bank of a given address

  * @param  Addr: Address of the FLASH Memory

  * @retval The bank of a given address

  */

static uint32_t GetBank(uint32_t Addr)

{

  uint32_t bank = 0;

  if (READ_BIT(SYSCFG->MEMRMP, SYSCFG_MEMRMP_FB_MODE) == 0)

  {

    /* No Bank swap */

    if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))

    {

      bank = FLASH_BANK_1;

    }

    else

    {

      bank = FLASH_BANK_2;

    }

  }

  else

  {

    /* Bank swap */

    if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))

    {

      bank = FLASH_BANK_2;

    }

    else

    {

      bank = FLASH_BANK_1;

    }

  }

  return bank;

}